ON Semiconductor NVMJST1D3N04CTXG

包装/外壳

TCPAK-10

安装类型

表面贴装

供应商器件包装

10-TCPAK

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

386 A

Rds On - Drain-Source Resistance

1.39 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

65 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

375 W

Channel Mode

Enhancement

Fall Time

9 ns

Forward Transconductance - Min

145 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

36 ns

Typical Turn-On Delay Time

15 ns

Package

Tape & Reel (TR)

Base Product Number

NVMJST1D

Current - Continuous Drain (Id) @ 25℃

386A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

375W (Tc)

Product Status

活跃

系列

NVMJST1D3N04C

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.39mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 170µA

输入电容(Ciss)(Max)@Vds

4300 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

65 nC @ 10 V

上升时间

47 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-