Panasonic PGA26E19BA

包装/外壳

DFN-8

Vds - Drain-Source Breakdown Voltage

600 V

Moisture Sensitive

有

Typical Turn-On Delay Time

3.4 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

-

Unit Weight

0.005686 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

200

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

PGA26E19BA2

Manufacturer

Panasonic

Brand

Panasonic

Qg - Gate Charge

2 nC

Tradename

X-GaN

Rds On - Drain-Source Resistance

140 mOhms

RoHS

Details

Typical Turn-Off Delay Time

3.4 ns

Id - Continuous Drain Current

19 A

系列

PGA26E19BA

子类别

MOSFETs

技术

GaN

配置

Single

通道数量

1 Channel

上升时间

5.2 ns

产品类别

MOSFET

产品类别

MOSFET