Panjit 2N7002KW_R2_00001

底架

表面贴装

包装/外壳

SOT-323-3

引脚数

3

RoHS

Compliant

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

12000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

100 mS

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

800 pC

Rds On - Drain-Source Resistance

4 Ohms

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

115 mA

包装

Reel

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

115 mA

栅极至源极电压(Vgs)

20 V

产品类别

MOSFET

辐射硬化

无