参数名
参数值
参数名
参数值
包装/外壳
SOT-23-3
Vds - Drain-Source Breakdown Voltage
100 V
Typical Turn-On Delay Time
3.4 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
500 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
12000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
1.8 nC
Rds On - Drain-Source Resistance
10 Ohms
RoHS
Details
Typical Turn-Off Delay Time
8.2 ns
Id - Continuous Drain Current
170 mA
包装
Reel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
19 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET