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价格梯度
内地含税价
1
¥2.439837
10
¥2.30173
100
¥2.17145
500
¥2.048536
1000
¥1.932581
PJA3409_R1_00001详情
Panjit PJA3409_R1_00001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
安装类型
表面贴装
供应商器件包装
SOT-23
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
5 ns
Vgs th - Gate-Source Threshold Voltage
2.1 V
Pd - Power Dissipation
1.25 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
9.8 nC
Rds On - Drain-Source Resistance
110 mOhms
RoHS
Details
Typical Turn-Off Delay Time
25 ns
Id - Continuous Drain Current
2.9 A
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Panjit International Inc.
Power Dissipation (Max)
1.25W (Ta)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.1V @ 250µA
系列
NFET-30TMP
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
110mOhm @ 2.9A, 10V
输入电容(Ciss)(Max)@Vds
396 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
9.8 nC @ 10 V
上升时间
30 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 P-Channel
场效应管特性
-
产品类别
MOSFET
PJA3409_R1_00001拓展信息
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