Panjit PJA3412-AU_R2_000A1

包装/外壳

SOT-23-3

安装类型

表面贴装

供应商器件包装

SOT-23

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

4 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Qualification

AEC-Q101

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

12000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

4.6 nC

Rds On - Drain-Source Resistance

56 mOhms

RoHS

Details

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

4.1 A

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 250µA

Product Status

不用于新设计

Power Dissipation (Max)

1.25W (Ta)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Current - Continuous Drain (Id) @ 25℃

4.1A (Ta)

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

56mOhm @ 4.1A, 4.5V

输入电容(Ciss)(Max)@Vds

350 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

4.6 nC @ 4.5 V

上升时间

47 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET