Panjit PJA3439_R1_00001

包装/外壳

TO-236-3, SC-59, SOT-23-3

安装类型

表面贴装

供应商器件包装

SOT-23

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

500mW (Ta)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Current - Continuous Drain (Id) @ 25℃

300mA (Ta)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

500 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

1.1 nC

Rds On - Drain-Source Resistance

13 Ohms

Id - Continuous Drain Current

300 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

4Ohm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

51 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

1.1 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-