Panjit PJC7400_R1_00001

包装/外壳

SOT-323-3

安装类型

表面贴装

供应商器件包装

SOT-323

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

350 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

4.8 nC

Rds On - Drain-Source Resistance

85 mOhms

RoHS

Details

Typical Turn-Off Delay Time

812 ns

Id - Continuous Drain Current

1.9 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

350mW (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 250µA

系列

NFET-30TAMN

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

70mOhm @ 1.9A, 10V

输入电容(Ciss)(Max)@Vds

447 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

4.8 nC @ 10 V

上升时间

38 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET