Panjit PJD25N06A_L2_00001

包装/外壳

TO-252-3

安装类型

表面贴装

供应商器件包装

TO-252

Dimensions

D2,3x6,3mm

Insulation Voltage

500 V

RoHS

有

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

7.1 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

34 mOhms

Typical Turn-Off Delay Time

31 ns

Id - Continuous Drain Current

25 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

5.5A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Product Status

活跃

系列

n/a

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

容差

±1 %

电阻

430 Ohm

组成

Metal Film

子类别

MOSFETs

技术

Si

终端样式

Axial

注意

n/a

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

34mOhm @ 15A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

1173 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

大小

0207

上升时间

25 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

额定功率

0,6 W

产品类别

MOSFET