Panjit PJD4NA50A_L2_00001

安装类型

THT Radial

包装/外壳

TO-252AA-3

供应商器件包装

TO-252

型芯材料

Ferrite

MSL

n/a

Shield

Unshielded

RoHS

有

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

9.8 nC

Rds On - Drain-Source Resistance

2.3 Ohms

Typical Turn-Off Delay Time

31 ns

Id - Continuous Drain Current

4 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

78W (Tc)

Product Status

不用于新设计

操作温度

-55...+125°C

系列

09P

包装

MouseReel

容差

±5 %

子类别

MOSFETs

技术

Si

配置

Single

注意

n/a

通道数量

1 Channel

电感,电感

22 000 uH

测试频率

0,02 MHz

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.3Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

449 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

9.8 nC @ 10 V

大小

D9,5x14mm

上升时间

11 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

自谐振频率

0,3 MHz

场效应管特性

-

特征

-

产品类别

MOSFET