Panjit PJD60R620E_L2_00001

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

TO-252

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.010476 oz

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

21 nC

Rds On - Drain-Source Resistance

620 mOhms

RoHS

Details

Id - Continuous Drain Current

7 A

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Product Status

不用于新设计

Power Dissipation (Max)

2W (Ta), 78W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

1.2A (Ta), 7A (Tc)

系列

NFET-600SMN

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

620mOhm @ 2.4A, 10V

输入电容(Ciss)(Max)@Vds

457 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

21 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET