Panjit PJD8NA65A_L2_00001

包装/外壳

TO-252AA-3

安装类型

表面贴装

供应商器件包装

TO-252

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer

TE Connectivity

Brand

TE Connectivity / DEUTSCH

RoHS

N

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

140 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

29 nC

Rds On - Drain-Source Resistance

1.2 Ohms

Typical Turn-Off Delay Time

92 ns

Id - Continuous Drain Current

7.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

140W (Tc)

Product Status

不用于新设计

包装

Bulk

系列

NFET-650SMN

操作温度

-55°C ~ 150°C (TJ)

子类别

Circular Connectors

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 3.75A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

1245 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

29 nC @ 10 V

上升时间

27 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

军规圆形连接器

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

军规圆形连接器