Panjit PJE8401_R1_00001

包装/外壳

SOT-523-3

安装类型

表面贴装

供应商器件包装

SOT-523

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

4 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

300 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

5.4 nC

Rds On - Drain-Source Resistance

210 mOhms

RoHS

Details

Typical Turn-Off Delay Time

78 ns

Id - Continuous Drain Current

900 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Panjit International Inc.

Power Dissipation (Max)

300mW (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 250µA

系列

NFET-20TBMP

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

130mOhm @ 900mA, 4.5V

输入电容(Ciss)(Max)@Vds

416 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

5.4 nC @ 4.5 V

上升时间

27 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET