Panjit PJF4NA65A_T0_00001

包装/外壳

ITO-220AB-F-3

安装类型

通孔

供应商器件包装

ITO-220AB

Factory Pack QuantityFactory Pack Quantity

1800

Mounting Styles

PCB 安装

Manufacturer

TT Electronics

Brand

Welwyn Components / TT Electronics

Qualification

AEC-Q200

Case Code - in

2512

Case Code - mm

6432

Unit Weight

0.001429 oz

RoHS

Details

Id - Continuous Drain Current

4 A

Typical Turn-Off Delay Time

52 ns

Rds On - Drain-Source Resistance

2.7 Ohms

Qg - Gate Charge

18 nC

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

33 W

Vgs th - Gate-Source Threshold Voltage

4 V

Typical Turn-On Delay Time

11 ns

Vds - Drain-Source Breakdown Voltage

650 V

Package

Tube

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

33W (Tc)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

包装

Reel

系列

HVC

操作温度

-55°C ~ 150°C (TJ)

容差

0.5 %

温度系数

100 PPM / C

电阻

4.32 MOhms

应用

汽车级

子类别

Resistors

技术

厚膜

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.7Ohm @ 2A, 10V

输入电容(Ciss)(Max)@Vds

555 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

18 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

厚膜电阻器

晶体管类型

1 N-Channel

场效应管特性

-

特征

-

产品类别

Thick Film Resistors - SMD