Panjit PJMB390N65EC_R2_00601

包装/外壳

TO-263-3

安装类型

表面贴装

供应商器件包装

TO-263

Rds On - Drain-Source Resistance

390 mOhms

RoHS

Details

Typical Turn-Off Delay Time

87 ns

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

87.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.000510 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

19 nC

Id - Continuous Drain Current

10 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

87.5W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

390mOhm @ 5A, 10V

输入电容(Ciss)(Max)@Vds

726 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

19 nC @ 10 V

上升时间

50 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET