Panjit PJMF210N65EC_T0_00601

包装/外壳

ITO-220AB-F

安装类型

通孔

供应商器件包装

ITO-220AB-F

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

32 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

210 mOhms

RoHS

Details

Typical Turn-Off Delay Time

111 ns

Id - Continuous Drain Current

19 A

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Product Status

活跃

Power Dissipation (Max)

32W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Package

Tube

包装

Tube

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

210mOhm @ 9.5A, 10V

输入电容(Ciss)(Max)@Vds

1412 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

34 nC @ 10 V

上升时间

65 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

N-Channel

场效应管特性

-

产品类别

MOSFET