Panjit PJP4NA50A_T0_00001

包装/外壳

TO-220AB-3

安装类型

通孔

供应商器件包装

TO-220AB

Id - Continuous Drain Current

4 A

Typical Turn-Off Delay Time

31 ns

RoHS

Details

Rds On - Drain-Source Resistance

2.3 Ohms

Qg - Gate Charge

9.8 nC

Brand

Panjit

Manufacturer

Panjit

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

50

Minimum Operating Temperature

- 55 C

Unit Weight

0.068784 oz

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

90 W

Vgs th - Gate-Source Threshold Voltage

4 V

Typical Turn-On Delay Time

12 ns

Vds - Drain-Source Breakdown Voltage

500 V

Package

Tube

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

90W (Tc)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

包装

Tube

系列

NFET-500CTMN

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.3Ohm @ 2A, 10V

输入电容(Ciss)(Max)@Vds

449 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

9.8 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET