Panjit PJQ2463A_R1_00001

包装/外壳

6-WDFN Exposed Pad

安装类型

表面贴装

供应商器件包装

DFN2020B-6

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000636 oz

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

105 mOhms

RoHS

Details

Id - Continuous Drain Current

3.2 A

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

2W (Ta)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

3.2A (Ta)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

系列

NFET-60FIMP

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

105mOhm @ 3A, 10V

输入电容(Ciss)(Max)@Vds

785 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

10 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET