参数名
参数值
参数名
参数值
包装/外壳
DFN2020-8
Vds - Drain-Source Breakdown Voltage
20 V
Moisture Sensitive
有
Typical Turn-On Delay Time
11 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
1.25 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
2.2 nC
Rds On - Drain-Source Resistance
325 mOhms
RoHS
Details
Typical Turn-Off Delay Time
130 ns
Id - Continuous Drain Current
1.5 A
包装
Reel
子类别
MOSFETs
技术
Si
通道数量
1 Channel
上升时间
38 ns
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET