Panjit PJQ4408P_R2_00001

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

DFN3333-8

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001076 oz

Factory Pack QuantityFactory Pack Quantity

5000

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

7.1 nC

Rds On - Drain-Source Resistance

9 mOhms

RoHS

Details

Id - Continuous Drain Current

42 A

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 35W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

9mOhm @ 16A, 10V

输入电容(Ciss)(Max)@Vds

763 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

7.1 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET