Panjit PJQ4414P_R2_00001

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

DFN3333-8

Id - Continuous Drain Current

25 A

RoHS

Details

Rds On - Drain-Source Resistance

18 mOhms

Qg - Gate Charge

4.3 nC

Brand

Panjit

Manufacturer

Panjit

Factory Pack QuantityFactory Pack Quantity

5000

Unit Weight

0.001076 oz

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

30 V

Current - Continuous Drain (Id) @ 25℃

8A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 21W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

18mOhm @ 9A, 10V

输入电容(Ciss)(Max)@Vds

392 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

4.3 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET