Panjit PJQ5428_R2_00001

包装/外壳

8-PowerVDFN

安装类型

表面贴装

供应商器件包装

DFN5060-8

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

2W (Ta), 83W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

20A (Ta), 130A (Tc)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Qg - Gate Charge

60 nC

Rds On - Drain-Source Resistance

1.6 mOhms

Id - Continuous Drain Current

130 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.6mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

6771 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

60 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-