Panjit PJQ5463A_R2_00001

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

DFN5060-8

RoHS

Compliant

Vds - Drain-Source Breakdown Voltage

60 V

Moisture Sensitive

有

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002822 oz

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

17 nC

Rds On - Drain-Source Resistance

68 mOhms

Id - Continuous Drain Current

15 A

Current - Continuous Drain (Id) @ 25℃

4A (Ta), 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

包装

Bulk

操作温度

-55°C ~ 150°C (TJ)

容差

20 %

最高工作温度

125 °C

最小工作温度

-55 °C

电容量

33 nF

子类别

MOSFETs

技术

Si

深度

3.81 mm

电介质

X7R

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

68mOhm @ 7.5A, 10V

输入电容(Ciss)(Max)@Vds

879 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

17 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

长度

7.62 mm