Panjit PJQ5466A_R2_00001

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

DFN5060-8

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Qg - Gate Charge

28 nC

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

6.5A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 83W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Rds On - Drain-Source Resistance

21 mOhms

Id - Continuous Drain Current

40 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

21mOhm @ 15A, 10V

输入电容(Ciss)(Max)@Vds

1680 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

28 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-