Panjit PJS6413_S1_00001

安装类型

表面贴装

包装/外壳

SOT-23-6

供应商器件包装

SOT-23-6

Voltage, Rating

150 V

Id - Continuous Drain Current

4.4 A

RoHS

Details

Rds On - Drain-Source Resistance

82 mOhms

Qg - Gate Charge

7 nC

Brand

Panjit

Manufacturer

Panjit

Factory Pack QuantityFactory Pack Quantity

3000

Unit Weight

0.000501 oz

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Vds - Drain-Source Breakdown Voltage

20 V

Current - Continuous Drain (Id) @ 25℃

4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 250µA

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

容差

0.5 %

温度系数

25 ppm/°C

电阻

5.62 Ω

最高工作温度

155 °C

最小工作温度

-55 °C

组成

Thin Film

子类别

MOSFETs

额定功率

250 mW

技术

Si

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

82mOhm @ 4.4A, 4.5V

输入电容(Ciss)(Max)@Vds

522 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

7 nC @ 10 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

高度

650 µm