参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
SOT-23-6
供应商器件包装
SOT-23-6
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.3 V
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Unit Weight
0.000501 oz
Factory Pack QuantityFactory Pack Quantity
10000
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
10 nC
Rds On - Drain-Source Resistance
46 mOhms
RoHS
Details
Id - Continuous Drain Current
5.2 A
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
厂商
Panjit International Inc.
Power Dissipation (Max)
2W (Ta)
Product Status
活跃
系列
NFET-20TLMP
包装
Reel
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
46mOhm @ 5.2A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.3V @ 250µA
输入电容(Ciss)(Max)@Vds
980 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
10 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET