Panjit PJU4NA50A_T0_00001

包装/外壳

TO-251AA-3

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

80

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

9.8 nC

Rds On - Drain-Source Resistance

2.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

31 ns

Id - Continuous Drain Current

4 A

系列

NFET-500SDMN

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

11 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET