Panjit PJW1NA60B_R2_00001

包装/外壳

TO-261-4, TO-261AA

安装类型

表面贴装

供应商器件包装

SOT-223

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 250µA

Product Status

Obsolete

Power Dissipation (Max)

3.3W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

400mA (Ta)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

系列

-

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10Ohm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

210 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

6.1 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-