Panjit PJW5P03_R2_00001

安装类型

通孔

包装/外壳

SOT-223-3

供应商器件包装

SOT-223

RoHS

有

Contact Materials

-

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

5.6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.6 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004339 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

4.8 nC

Rds On - Drain-Source Resistance

50 mOhms

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

4.6 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

1.6W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

系列

FAC

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

类型

Holder

子类别

MOSFETs

技术

Si

方向

Vertical

额定电流

16 A

触点表面处理

-

终端样式

Screw

注意

-

通道数量

1 Channel

电路数量

1

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

50mOhm @ 3A, 10V

保险丝类型

-

输入电容(Ciss)(Max)@Vds

516 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

4.8 nC @ 4.5 V

大小

-

上升时间

8.5 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET