参数名
参数值
参数名
参数值
包装/外壳
SOT-563-6
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
6 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
300 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
1.6 nC
Rds On - Drain-Source Resistance
400 mOhms
RoHS
Details
Typical Turn-Off Delay Time
41 ns
Id - Continuous Drain Current
700 mA
包装
Reel
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
上升时间
26 ns
产品类别
MOSFET
晶体管类型
2 N-Channel
产品类别
MOSFET