Panjit PJX8812_R1_00001

安装类型

THT Axial

包装/外壳

SOT-563-6

供应商器件包装

SOT-563

型芯材料

Iron dust

MSL

n/a

Shield

Unshielded

RoHS

有

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7.1 ns

Vgs th - Gate-Source Threshold Voltage

1.1 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

870 pC

Rds On - Drain-Source Resistance

2.3 Ohms

Typical Turn-Off Delay Time

41 ns

Id - Continuous Drain Current

350 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

厂商

Panjit International Inc.

Product Status

不用于新设计

操作温度

-55...+125°C

系列

MISC

包装

Reel

容差

±20 %

子类别

MOSFETs

技术

Si

配置

Dual

注意

n/a

通道数量

2 Channel

电感,电感

2 uH

测试频率

1 MHz

功率 - 最大

300mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

1.2Ohm @ 350mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.1V @ 250µA

输入电容(Ciss)(Max)@Vds

34pF @ 15V

门极电荷(Qg)(最大)@Vgs

0.87nC @ 4.5V

大小

D5x12mm

上升时间

20 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

2 N-Channel

自谐振频率

- MHz

场效应管特性

Standard

特征

-

产品类别

MOSFET