Panjit PSMB033N10NS2_R2_00201

包装/外壳

TO-263AB-3

RoHS

符合RoHS标准

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

219 A

Rds On - Drain-Source Resistance

3.3 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Qg - Gate Charge

65 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

333 W

Channel Mode

Enhancement

Fall Time

4.9 ns

Factory Pack Quantity

800

Typical Turn-Off Delay Time

24.7 ns

Typical Turn-On Delay Time

15.5 ns

Unit Weight

0.049384 oz

包装

Reel

配置

Single

通道数量

1 Channel

上升时间

4.9 ns

晶体管类型

1 N-Channel