PANJIT International 2N7002KTB-R1-00001

包装/外壳

SOT-523-3

安装类型

表面贴装

表面安装

YES

供应商器件包装

SOT-523 Flat Leads

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

800 pC

Rds On - Drain-Source Resistance

4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

125 ns

Id - Continuous Drain Current

115 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

200mW (Ta)

Product Status

活跃

Package Description

SMALL OUTLINE, R-PDSO-F3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

2N7002KTB_R1_00001

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

PAN JIT INTERNATIONAL INC

Risk Rank

5.55

Drain Current-Max (ID)

0.115 A

系列

NFET-035TB

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

ECCN 代码

EAR99

附加功能

超低电阻

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PDSO-F3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

3Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

35 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

0.8 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

3 Ω

DS 击穿电压-最小值

60 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

反馈上限-最大值 (Crss)

5 pF

产品类别

MOSFET