Qorvo QPD1025

包装/外壳

NI-1230-4

Factory Pack QuantityFactory Pack Quantity

18

Vgs - Gate-Source Voltage

- 2.8 V

RoHS

Details

Transistor Polarity

Dual N-Channel

Id - Continuous Drain Current

28 A

Vds - Drain-Source Breakdown Voltage

65 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Moisture Sensitive

有

Pd - Power Dissipation

685 W

Mounting Styles

法兰安装

Rds On - Drain-Source Resistance

-

包装

Tray

系列

QPD1025

类型

射频功率MOSFET

工作频率

1 GHz to 1.1 GHz

通道数量

2 Channel

输出功率

1.862 kW

增益

22.5 dB