Qorvo TGF2929-FL

包装/外壳

NI-360

Vgs th - Gate-Source Threshold Voltage

- 2.9 V

Part # Aliases

TGF2929 1123811

Unit Weight

2.264236 oz

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

12 A

Vds - Drain-Source Breakdown Voltage

28 V

Moisture Sensitive

有

Pd - Power Dissipation

144 W

Factory Pack QuantityFactory Pack Quantity

25

Vgs - Gate-Source Voltage

145 V

Maximum Operating Temperature

+ 85 C

Minimum Operating Temperature

- 40 C

Mounting Styles

法兰安装

Rds On - Drain-Source Resistance

-

包装

Tray

系列

TGF2929

类型

射频功率MOSFET

工作频率

3.5 GHz

输出功率

107 W

增益

14 dB