2SJ551L-E详情
Renesas 2SJ551L-E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Package Description
IN-LINE, R-PSIP-T3
Package Style
IN-LINE
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Manufacturer Package Code
PRSS0004AE-A4
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
2SJ551L-E
Package Shape
RECTANGULAR
Manufacturer
Renesas Electronics Corporation
Number of Elements
1
Part Life Cycle Code
不推荐
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Risk Rank
7.7
Part Package Code
LDPAK(L)
Drain Current-Max (ID)
18 A
JESD-609代码
e6
ECCN 代码
EAR99
端子表面处理
锡铋
子类别
其他晶体管
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
4
JESD-30代码
R-PSIP-T3
资历状况
不合格
Brand Name
Renesas
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
最大漏极电流 (Abs) (ID)
18 A
漏极-源极导通最大电阻
0.11 Ω
脉冲漏极电流-最大值(IDM)
72 A
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
60 W
2SJ551L-E拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America








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