Renesas 2SK3483-Z-AZ

安装类型

通孔

包装/外壳

TO-251-3 Short Leads, IPak, TO-251AA

表面安装

YES

引脚数

2 +Tab

供应商器件包装

MP-3

终端数量

2

晶体管元件材料

SILICON

Continuous Drain Current

28(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

TO-252

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

28A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Renesas

Power Dissipation (Max)

1W (Ta), 40W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Drain Current-Max (ID)

28 A

Part Package Code

TO-252AB

Risk Rank

8.05

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Part Life Cycle Code

Obsolete

Manufacturer

Renesas Electronics Corporation

Package Shape

RECTANGULAR

Manufacturer Part Number

2SK3483-Z-AZ

Rohs Code

有

Operating Temperature-Max

150 °C

Reflow Temperature-Max (s)

未说明

Package Body Material

PLASTIC/EPOXY

Package Style

小概要

Package Description

SMALL OUTLINE, R-PSSO-G2

操作温度

150°C

系列

-

ECCN 代码

EAR99

类型

功率MOSFET

HTS代码

8541.29.00.95

子类别

FET 通用电源

技术

MOSFET (Metal Oxide)

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

JESD-30代码

R-PSSO-G2

资历状况

不合格

Brand Name

Renesas

极性

N

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

功率耗散

1(W)

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

52mOhm @ 14A, 10V

输入电容(Ciss)(Max)@Vds

2300 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

49 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-252AB

最大漏极电流 (Abs) (ID)

28 A

漏极-源极导通最大电阻

0.059 Ω

DS 击穿电压-最小值

100 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

40 W

场效应管特性

-

达到SVHC

compliant