Renesas NP82N04MDG-S18-AY

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

Package

Tube

Current - Continuous Drain (Id) @ 25℃

82A (Tc)

厂商

Renesas Electronics America Inc

Power Dissipation (Max)

1.8W (Ta), 143W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

175°C

系列

Automotive, AEC-Q101

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2mOhm @ 41A, 10V

输入电容(Ciss)(Max)@Vds

9000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

150 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-