Renesas NP82N04NDG-S18-AY

包装/外壳

TO-262-3 Full Pack, I²Pak

安装类型

通孔

供应商器件包装

TO-262-3

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Product Status

Obsolete

Power Dissipation (Max)

1.8W (Ta), 143W (Tc)

厂商

Renesas Electronics America Inc

Current - Continuous Drain (Id) @ 25℃

82A (Tc)

Package

Tube

系列

-

操作温度

175°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2mOhm @ 41A, 10V

输入电容(Ciss)(Max)@Vds

9 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

150 nC @ 10 V

漏源电压 (Vdss)

40 V

场效应管特性

-