Renesas RJK60S4DPP-E0#T2

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220FP

Package

Tube

Current - Continuous Drain (Id) @ 25℃

16A (Tc)

厂商

Renesas Electronics America Inc

Power Dissipation (Max)

29.9W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

-

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

290mOhm @ 8A, 10V

输入电容(Ciss)(Max)@Vds

988 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

18 nC @ 10 V

漏源电压 (Vdss)

600 V

场效应管特性

超级交界处