UPA2680T1E-E2-AT详情
Renesas UPA2680T1E-E2-AT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-VDFN Exposed Pad
供应商器件包装
6-MLP (3x3)
Package
Bulk
厂商
PEI-Genesis
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
系列
*
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 3A, 10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250µA
输入电容(Ciss)(Max)@Vds
190 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
3.1 nC @ 4.5 V
漏源电压 (Vdss)
20 V
场效应管特性
Schottky Diode (Isolated)
UPA2680T1E-E2-AT拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America








哦! 它是空的。