UPA679TB-T1-A详情
Renesas UPA679TB-T1-A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
表面安装
YES
引脚数
6
供应商器件包装
SC-88
Drain-Source On-Volt
20(V)
Operating Temperature Classification
Military
Package Type
SC-88
Operating Temp Range
-55C to 150C
Gate-Source Voltage (Max)
±12(V)
Channel Mode
Enhancement
Number of Elements
2
Rad Hardened
无
Mounting
表面贴装
Package
Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
350mA, 250mA
厂商
Renesas Electronics America Inc
Product Status
最后一次购买
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
-
Package Description
,
Manufacturer Package Code
PTSP0006JB-A6
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
UPA679TB-T1-A
Manufacturer
Renesas Electronics Corporation
Part Life Cycle Code
不推荐
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Risk Rank
4.83
Part Package Code
SSP
包装
卷带
系列
-
无铅代码
有
ECCN 代码
EAR99
类型
功率MOSFET
子类别
其他晶体管
峰值回流焊温度(摄氏度)
未说明
Brand Name
Renesas
极性
N/P
功率耗散
0.2(W)
功率 - 最大
200mW
场效应管类型
N and P-Channel
Rds On(Max)@Id,Vgs
570mOhm @ 300mA, 4.5V
输入电容(Ciss)(Max)@Vds
28pF @ 10V
门极电荷(Qg)(最大)@Vgs
-
漏源电压 (Vdss)
20V
极性/通道类型
N-CHANNEL AND P-CHANNEL
最大漏极电流 (Abs) (ID)
0.35 A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.2 W
场效应管特性
逻辑电平门
达到SVHC
compliant
UPA679TB-T1-A拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America








哦! 它是空的。