Renesas Electronics America H7N1002AB-E
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H7N1002AB-E
2038-H7N1002AB-E
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H7N1002AB-E datasheet pdf and Integrated Circuits (ICs) product details from Renesas Electronics America stock available at utmel
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H7N1002AB-E详情
Renesas Electronics America H7N1002AB-E重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Manufacturer Part Number
H7N1002AB-E
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code
PRSS0004AC-A4
Risk Rank
7.81
Drain Current-Max (ID)
75 A
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Reflow Temperature-Max (s)
未说明
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
4
JESD-30代码
R-PSFM-T3
资历状况
不合格
Brand Name
Renesas
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-220AB
漏极-源极导通最大电阻
0.015 Ω
脉冲漏极电流-最大值(IDM)
300 A
DS 击穿电压-最小值
100 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
H7N1002AB-E拓展信息
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America







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