Renesas Electronics America H7P1002DS-E
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H7P1002DS-E
2038-H7P1002DS-E
晶体管 - FET,MOSFET - 单个
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H7P1002DS-E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Renesas Electronics America stock available at utmel
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H7P1002DS-E详情
Renesas Electronics America H7P1002DS-E重要参数规格及、参数值,及相似型号如下:
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引脚数
2 +Tab
Mounting
表面贴装
Rad Hardened
无
Number of Elements
1
Channel Mode
Enhancement
Gate-Source Voltage (Max)
±20(V)
Operating Temp Range
-55C to 150C
Package Type
DPAK(S)
Operating Temperature Classification
Military
Drain-Source On-Volt
100(V)
Continuous Drain Current
15(A)
包装
卷带
类型
功率MOSFET
极性
P
功率耗散
30(W)
H7P1002DS-E拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America







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