Renesas Electronics America HAT2256RWS-E

安装类型

表面贴装

包装/外壳

8-SOIC (0.154, 3.90mm Width)

Power Dissipation (Max)

2W Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25℃

8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

操作温度

150°C

包装

Tape & Reel (TR)

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30m Ω @ 4A, 10V

输入电容(Ciss)(Max)@Vds

1210pF @ 10V

门极电荷(Qg)(最大)@Vgs

10nC @ 4.5V

漏源电压 (Vdss)

60V

Vgs（最大值）

±20V