Renesas Electronics America HAT2279HWS-E
- 收藏
- 对比
HAT2279HWS-E
2038-HAT2279HWS-E
晶体管 - FET,MOSFET - 单个
SC-100, SOT-669
大陆
立即发货

MOSFET N-PAK 8SOP
1最小包装量--
HAT2279HWS-E详情
Renesas Electronics America HAT2279HWS-E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-100, SOT-669
Current - Continuous Drain (Id) @ 25℃
30A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
25W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.3V @ 1mA
操作温度
150°C
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
12m Ω @ 15A, 10V
输入电容(Ciss)(Max)@Vds
3520pF @ 10V
门极电荷(Qg)(最大)@Vgs
60nC @ 10V
漏源电压 (Vdss)
80V
Vgs(最大值)
±20V
HAT2279HWS-E拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America








哦! 它是空的。