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价格梯度
内地含税价
1
¥7.856506
10
¥7.411797
100
¥6.992265
500
¥6.596472
1000
¥6.223089
Renesas Electronics America Inc NP35N055YUK-E1-AY
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- 对比
NP35N055YUK-E1-AY
2038-NP35N055YUK-E1-AY
晶体管 - FET,MOSFET - 单个
8-SMD, Flat Lead Exposed Pad
大陆
立即发货

MOSFET N-CH 55V 35A 8HSON
--最小包装量--
¥
总价: ¥
NP35N055YUK-E1-AY详情
Renesas Electronics America Inc NP35N055YUK-E1-AY重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SMD, Flat Lead Exposed Pad
引脚数
8
供应商器件包装
8-HSON
厂商
Renesas Electronics America Inc
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
1W (Ta), 97W (Tc)
Base Product Number
NP35N055
Factory Pack QuantityFactory Pack Quantity
2500
Manufacturer
Renesas Electronics
Brand
Renesas Electronics
RoHS
Details
Manufacturer Package Code
PLSN0008KA-A8
Manufacturer Part Number
NP35N055YUK-E1-AY
Part Life Cycle Code
活跃
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Risk Rank
5.71
Part Package Code
HSON
系列
-
操作温度
175°C
包装
Reel
子类别
MOSFETs
Brand Name
Renesas
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6.7mOhm @ 18A, 10V
输入电容(Ciss)(Max)@Vds
3360 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
57 nC @ 10 V
漏源电压 (Vdss)
55 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
宽度
5 mm
高度
1.45 mm
长度
5.4 mm
达到SVHC
compliant
NP35N055YUK-E1-AY拓展信息
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas Electronics America
Renesas
Renesas Electronics America
Renesas Electronics America






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