Renesas Electronics America Inc NP75N055YUK-E1-AY

包装/外壳

8-PowerLDFN

安装类型

表面贴装

供应商器件包装

8-HSON (5x5.4)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Product Status

活跃

厂商

Renesas Electronics America Inc

Power Dissipation (Max)

1W (Ta), 138W (Tc)

Factory Pack QuantityFactory Pack Quantity

2500

Manufacturer

Renesas Electronics

Brand

Renesas Electronics

RoHS

Details

Vds - Drain-Source Breakdown Voltage

55 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

138 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

4.5 mOhms

Id - Continuous Drain Current

75 A

系列

Automotive, AEC-Q101

操作温度

175°C

包装

Reel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.5mOhm @ 38A, 10V

输入电容(Ciss)(Max)@Vds

5300 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

83 nC @ 10 V

漏源电压 (Vdss)

55 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

宽度

5 mm

高度

1.45 mm

长度

5.4 mm