Renesas Electronics America Inc RJK2017DPP-M0#T2

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220FL

厂商

Renesas Electronics America Inc

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

30W (Tc)

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

50 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

30 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Factory Pack QuantityFactory Pack Quantity

25

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Renesas Electronics

Brand

Renesas Electronics

Qg - Gate Charge

66 nC

Rds On - Drain-Source Resistance

47 mOhms

RoHS

Details

Typical Turn-Off Delay Time

95 ns

Id - Continuous Drain Current

45 A

系列

-

操作温度

150°C

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

47mOhm @ 22.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

4800 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

66 nC @ 10 V

上升时间

40 ns

漏源电压 (Vdss)

200 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET

宽度

10 mm

高度

4.5 mm

长度

15 mm