Rochester Electronics FDV303N
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FDV303N
2071-FDV303N
晶体管 - FET,MOSFET - 单个
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大陆
立即发货

680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1最小包装量--
FDV303N详情
Rochester Electronics FDV303N重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
3
Voltage Rating (DC)
25 V
额定电流
680 mA
功率耗散
350 mW
漏源电压 (Vdss)
25 V
连续放电电流(ID)
680 mA
漏源击穿电压
25 V
漏源电阻
450 mΩ
无铅
无铅
FDV303N拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics, LLC







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